Part Image

NTHL040N120SC1 - onsemi

Description: Max RDS(on) = xxmΩ at Vgs = 20V, Id = 20A; High Speed Switching and Low Capacitance; 100% UIL Tested

Download NTHL040N120SC1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NTHL040N120SC1 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - NTHL040N120SC1
click to zoom
3D Models
NTHL040N120SC1 - onsemi  - 3D model - Transistor Outline, Vertical - NTHL040N120SC1
click to zoom

NTHL040N120SC1 Details

  • Manufacturer Part Number:

    NTHL040N120SC1

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3LD

  • Manufacturer Package Code:

    340CX

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-01-15

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    613 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.056 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    12 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    348 W

  • Pulsed Drain Current-Max (IDM):

    240 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

NTHL040N120SC1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NTHL040N120SC1 is -55°C to 150°C.
  • To ensure reliability, it's essential to follow the recommended thermal design and layout guidelines, and to ensure that the device is properly cooled. Additionally, consider using a thermal interface material to improve heat transfer between the device and the heat sink.
  • The recommended gate drive voltage for the NTHL040N120SC1 is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the NTHL040N120SC1 from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static package. Additionally, use ESD-protected equipment and follow proper ESD handling procedures.
  • The maximum allowable current for the NTHL040N120SC1 is 40A, with a maximum pulsed current of 80A.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NTHL040N120SC1 Overview

Use the download button to access the NTHL040N120SC1 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like NTHL0, or try a keyword search, such as Power Field-Effect Transistors

Parts related to NTHL040N120SC1

Showing 0 results

NTHL040N120SC1 Alternates

Showing results

Image Part Number Model
Part Image NVHL040N120SC1 onsemi

Power Field-Effect Transistor, 60A I(D), 1200V, 0.056ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247