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SCTW60N120G2 - STMicroelectronics

Description: Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247 package

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SCTW60N120G2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - SCTW60N120G2
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SCTW60N120G2 Details

  • Manufacturer Part Number:

    SCTW60N120G2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.052 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    20 pF

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    200 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    389 W

  • Pulsed Drain Current-Max (IDM):

    177 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCTW60N120G2 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the SCTW60N120G2 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • The thermal resistance of the SCTW60N120G2 can be calculated using the thermal resistance values provided in the datasheet. The junction-to-case thermal resistance (RthJC) is 0.5°C/W, and the case-to-ambient thermal resistance (RthCA) depends on the specific heat sink and cooling system used. You can use the following formula: RthJA = RthJC + RthCA.
  • The recommended gate drive voltage for the SCTW60N120G2 is between 10V and 15V. However, the minimum gate drive voltage required to ensure proper switching is 6V. It's essential to ensure that the gate drive voltage is within the recommended range to prevent false triggering and ensure reliable operation.
  • Yes, the SCTW60N120G2 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing and oscillations.
  • The recommended dead time for the SCTW60N120G2 is typically in the range of 100ns to 500ns, depending on the specific application and switching frequency. The dead time should be long enough to prevent cross-conduction and ensure proper switching, but short enough to minimize losses and reduce the risk of electromagnetic interference (EMI).

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SCTW60N120G2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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