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NTHL082N65S3F - onsemi

Description: Optimized Capacitance; 700 V @ TJ = 150 °C; Typ. RDS(on) = 70 mΩ; Ultra Low Gate Charge (Typ. Qg = 81 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF); Excellent body diode performance (low Qrr, robust body diode); 100% Avalanche Tested; RoHS Compliant

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NTHL082N65S3F - onsemi - PCB symbol
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PCB Footprints
NTHL082N65S3F - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247−3LD_(4.82mm)
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3D Models
NTHL082N65S3F - onsemi - 3D model - Transistor Outline, Vertical - TO−247−3LD_(4.82mm)
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NTHL082N65S3F Details

  • Manufacturer Part Number:

    NTHL082N65S3F

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340CH

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    52 Weeks

  • Date Of Intro:

    2017-10-10

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    510 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.082 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    313 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTHL082N65S3F Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • Proper cooling is crucial for the NTHL082N65S3F. Ensure good thermal contact between the device and a heat sink, and use a thermal interface material (TIM) to fill any gaps. A heat sink with a thermal resistance of 1°C/W or lower is recommended.
  • The recommended gate drive voltage for the NTHL082N65S3F is between 10V and 15V. A higher gate drive voltage can reduce switching losses, but may also increase gate oxide stress.
  • Yes, the NTHL082N65S3F can be used in a parallel configuration to increase current handling capability. However, it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
  • A good PCB layout for the NTHL082N65S3F should minimize parasitic inductance and capacitance. Use a solid ground plane, keep the drain and source connections short, and use a Kelvin connection for the gate signal. A 2-layer or 4-layer PCB is recommended.

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NTHL082N65S3F Overview

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