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NTHS4101PT1G - onsemi

Description: Offers an Ultra Low RDS(on) Solution in the ChipFet™ Package; Miniature ChipFet™ Package with 40 % Smaller Footprint than TSOP-6, makes it an ideal device for Applications where board space is at a premium.; Low Profile (< 1.1 mm) allows it to fit easily into extremely thin environments such as Portable Electronics.; Designed to Provide Low RDS(on) at Gate Voltage ( as low as 1.8V). The Operating Voltage used in many Logic ICs in Portable Electronics.; Simplifies Circuit Design since Additional Boost Circui

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NTHS4101PT1G - onsemi - PCB symbol
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NTHS4101PT1G - onsemi PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - NTHS4101PT1G
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NTHS4101PT1G - onsemi - 3D model - SO Transistor Flat Lead - NTHS4101PT1G
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NTHS4101PT1G Details

  • Manufacturer Part Number:

    NTHS4101PT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    ChipFET

  • Package Description:

    CHIPFET-8

  • Pin Count:

    8

  • Manufacturer Package Code:

    1206A-03

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    4.8 A

  • Drain-source On Resistance-Max:

    0.034 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    190 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTHS4101PT1G Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. Multiple vias can be used to connect the thermal pad to an internal or bottom-side copper plane.
  • Ensure that the device is operated within the recommended temperature range (−40°C to 150°C). Use a heat sink or thermal interface material to reduce thermal resistance. Monitor the device's junction temperature to prevent overheating.
  • The device has internal ESD protection, but it's still recommended to follow standard ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-safe environment.
  • Yes, the NTHS4101PT1G is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is manufactured using a process that is compliant with IATF 16949.
  • Use a systematic approach to troubleshoot issues. Check the device's pinout and connections, ensure proper power supply and decoupling, and verify that the device is operated within its recommended specifications. Consult the datasheet and application notes for guidance.

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NTHS4101PT1G Overview

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