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NTJD4001NT1G - onsemi

Description: Low Gate charge for fast switching; Small footprint - 30% smaller than TSOP-6; ESD Protected Gate; RoHS Compliant

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PCB Footprints
NTJD4001NT1G - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SC-88(SOT-363) CASE 419B-02 ISSUE Y
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3D Models
NTJD4001NT1G - onsemi  - 3D model - SOT23 (6-Pin) - SC-88(SOT-363) CASE 419B-02 ISSUE Y
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NTJD4001NT1G Details

  • Manufacturer Part Number:

    NTJD4001NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88/SC70-6/SOT-363 6 LEAD

  • Pin Count:

    6

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.5

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    0.25 A

  • Drain-source On Resistance-Max:

    2.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    12 pF

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.272 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTJD4001NT1G Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve thermal performance. A minimum of 2 oz copper thickness is recommended for the thermal pad, and it should be connected to a solid ground plane to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended temperature range (–40°C to 150°C). Use a heat sink or thermal interface material to improve heat dissipation. Also, ensure that the device is not exposed to thermal shocks or rapid temperature changes.
  • The NTJD4001NT1G has built-in ESD protection, but it is still recommended to follow standard ESD handling procedures when handling the device. Use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-safe environment.
  • Yes, the NTJD4001NT1G is suitable for high-reliability applications. It is manufactured using a robust process and has undergone rigorous testing to ensure its reliability. However, it is still important to follow proper design and manufacturing practices to ensure the reliability of the final product.
  • Use a systematic approach to troubleshoot issues. Check the power supply voltage, input signals, and output loads. Verify that the device is operated within the recommended operating conditions. Use oscilloscopes or logic analyzers to debug the issue. If the issue persists, consult the onsemi support team for further assistance.

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NTJD4001NT1G Overview

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NTJD4001NT1G Alternates

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Part Image NTJD4001NT2G Rochester Electronics LLC

250mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 419B-02, SC-88, SC-70, 6 PIN

Part Image NTJD4001NT1 Rochester Electronics LLC

250mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 419B-02, SC-88, SC-70, 6 PIN

Part Image NTJD4001NT1G Rochester Electronics LLC

250mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 419B-02, SC-88, SC-70, 6 PIN

Part Image NTJD4001N onsemi

Small Signal Field-Effect Transistor, 0.25A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NTJD4001NT1 onsemi

Small Signal Field-Effect Transistor, 0.25A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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