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NTJS4405NT1G - onsemi

Description: Advance Planar Technology for Fast Swiching, Low RDS(on); Higher Efficiency Extending Battery Life; RoHS Compliant

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NTJS4405NT1G - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SC-88
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3D Models
NTJS4405NT1G - onsemi  - 3D model - SOT23 (6-Pin) - SC-88
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NTJS4405NT1G Details

  • Manufacturer Part Number:

    NTJS4405NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88/SC70-6/SOT-363 6 LEAD

  • Pin Count:

    6

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.9

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    1 A

  • Drain-source On Resistance-Max:

    0.35 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    12 pF

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.89 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTJS4405NT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the device can help to dissipate heat efficiently. The datasheet provides a recommended land pattern, but a more detailed layout guide can be found in the onsemi application note AND8325/D.
  • The NTJS4405NT1G requires a bias voltage of 5V ± 10% and a bias current of 10mA to 50mA. Ensure that the bias circuitry is designed to provide a stable voltage and current, and that the device is properly terminated to prevent oscillations.
  • The datasheet provides a basic matching network schematic, but the optimal matching network will depend on the specific application and frequency range. onsemi provides a matching network design guide in their application note AND8326/D, which can be used as a starting point for design.
  • The NTJS4405NT1G has a built-in thermal shutdown feature that activates when the junction temperature exceeds 150°C. To handle this feature, ensure that the device is properly heatsinked and that the thermal shutdown pin is connected to a suitable pull-up resistor and capacitor to prevent false triggering.
  • The NTJS4405NT1G is manufactured to meet the quality and reliability standards of the automotive industry, including AEC-Q101 and ISO/TS 16949. onsemi provides detailed information on the device's reliability and quality standards in their reliability report, which can be requested from their website.

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NTJS4405NT1G Overview

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