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NTLJD4116NT1G - onsemi

Description: Mosfet Array 30V 2.5A 710mW Surface Mount 6-WDFN (2x2)-55°C ~ 150°C (TJ)

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PCB Footprints
NTLJD4116NT1G - onsemi PCB footprint - Other - Other - WDFN6 2x2, 0.65P CASE 506AN ISSUE H_2025
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NTLJD4116NT1G - onsemi  - 3D model - Other - WDFN6 2x2, 0.65P CASE 506AN ISSUE H_2025
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NTLJD4116NT1G Details

  • Manufacturer Part Number:

    NTLJD4116NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFN6 2x2, 0.65P

  • Package Description:

    2 X 2 MM, LEAD FREE, CASE 506AN-01, WDFN6, 6 PIN

  • Pin Count:

    6

  • Manufacturer Package Code:

    506AN

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    2.5 A

  • Drain-source On Resistance-Max:

    0.09 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    32 pF

  • JESD-30 Code:

    S-XDSO-C6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.52 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTLJD4116NT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the device can help to dissipate heat efficiently. The datasheet provides a recommended land pattern, but a more detailed layout guide can be found in the onsemi application note AND8325/D.
  • The NTLJD4116NT1G requires a bias voltage of 2.5V to 5.5V. Ensure that the bias voltage is stable and noise-free, and that the input voltage is within the recommended range. A decoupling capacitor of 10nF to 100nF should be placed close to the device to filter out noise.
  • While the datasheet specifies a maximum frequency of 100 MHz, the actual operating frequency may be limited by the specific application and PCB layout. In general, the device can operate up to 200 MHz, but this may require careful PCB design and signal integrity analysis.
  • The NTLJD4116NT1G has built-in ESD protection, but it is still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is stored in an anti-static bag or container.
  • The device should be stored in a dry, cool place with a temperature range of -40°C to 125°C and humidity below 60%. Avoid exposing the device to extreme temperatures, moisture, or physical stress during storage.

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