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NTMFD020N06CT1G - onsemi

Description: Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance; These Devices are Pb-Free and are RoHS Compliant

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NTMFD020N06CT1G Details

  • Manufacturer Part Number:

    NTMFD020N06CT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL Dual / DFN-8

  • Manufacturer Package Code:

    506BT

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-01-17

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    16 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    27 A

  • Drain-source On Resistance-Max:

    0.0203 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    4.9 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    31 W

  • Pulsed Drain Current-Max (IDM):

    98 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

NTMFD020N06CT1G Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for NTMFD020N06CT1G is a 2x2mm QFN package with a 0.5mm pitch. The datasheet provides a recommended land pattern and soldering guidelines.
  • To ensure reliability in high-temperature applications, follow the recommended operating conditions, derate the device according to the thermal derating curve, and ensure proper thermal management, such as using a heat sink or thermal interface material.
  • The maximum allowed voltage on the gate of NTMFD020N06CT1G is ±20V, as specified in the datasheet. Exceeding this voltage may damage the device.
  • Yes, NTMFD020N06CT1G is suitable for high-frequency switching applications. However, ensure that the device is properly driven, and the layout is optimized to minimize parasitic inductance and capacitance.
  • To protect NTMFD020N06CT1G from ESD, follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits in the design, such as TVS diodes or ESD protection arrays.

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NTMFD020N06CT1G Overview

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