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NTMFD4902NFT1G - onsemi

Description: Mosfet Array 30V 10.3A, 13.3A 1.1W, 1.16W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

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NTMFD4902NFT1G Details

  • Manufacturer Part Number:

    NTMFD4902NFT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DFN8 5x6, 1.27P (SO8FL-Dual-Asymmetrical)

  • Package Description:

    DFN8, 8 PIN

  • Pin Count:

    8

  • Manufacturer Package Code:

    506BX

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    28.8 mJ

  • Case Connection:

    DRAIN SOURCE

  • Configuration:

    SERIES CONNECTED, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    13.5 A

  • Drain-source On Resistance-Max:

    0.01 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    105 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.45 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMFD4902NFT1G Frequently Asked Questions (FAQs)

  • A 2-layer PCB with a solid ground plane on the bottom layer and a thermal relief pattern on the top layer is recommended. The device should be placed near a thermal pad or a heat sink to ensure good heat dissipation.
  • The device requires a stable voltage supply and a proper biasing circuit to ensure optimal performance. A voltage regulator and a bias resistor network can be used to achieve this. Refer to the application note for a recommended biasing circuit.
  • The maximum allowable power dissipation for NTMFD4902NFT1G is 2.5W. Exceeding this limit can cause the device to overheat and reduce its lifespan.
  • Yes, NTMFD4902NFT1G is a high-reliability device that meets the requirements of AEC-Q101. It is suitable for use in automotive and other high-reliability applications.
  • The device has built-in ESD protection, but it is still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-safe environment.

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NTMFD4902NFT1G Overview

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