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NTMFD5C470NLT1G - onsemi

Description: High current capability; Low on resistance; 100% avalanche tested; Pb-Free; Small fooprint (5x6 mm)

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NTMFD5C470NLT1G - onsemi PCB footprint - Other - Other - DFN8 5x6 (SO8FL) CASE 506BT
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NTMFD5C470NLT1G - onsemi  - 3D model - Other - DFN8 5x6 (SO8FL) CASE 506BT
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NTMFD5C470NLT1G Details

  • Manufacturer Part Number:

    NTMFD5C470NLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SO-8FL Dual / DFN-8

  • Manufacturer Package Code:

    506BT

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    49 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.0178 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    8 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    24 W

  • Pulsed Drain Current-Max (IDM):

    110 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NTMFD5C470NLT1G Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a 2-3 layer board with a solid ground plane, and to place thermal vias under the package to dissipate heat efficiently. Additionally, keeping the component placement and routing symmetrical can help reduce thermal gradients.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended derating guidelines, ensure proper thermal management, and consider using a heat sink or thermal interface material. Additionally, verifying the device's operation within the specified temperature range and monitoring its performance under stress conditions can help identify potential issues.
  • Using a different gate driver than the recommended one may affect the device's performance, reliability, and efficiency. The recommended gate driver is optimized for the NTMFD5C470NLT1G's specific characteristics, and using a different driver may lead to issues such as increased switching losses, reduced efficiency, or even device damage. It's essential to verify the compatibility and performance of any alternative gate driver.
  • To handle the device's internal parasitic inductance and capacitance, it's essential to follow proper PCB layout and design practices, such as minimizing lead lengths, using a solid ground plane, and placing decoupling capacitors close to the device. Additionally, using a gate driver with a high current capability and a low output impedance can help mitigate the effects of parasitic inductance and capacitance.
  • Operating the device at a lower voltage than the recommended 450V may affect its performance, efficiency, and reliability. The device's characteristics, such as its on-state resistance and switching losses, may be compromised, leading to reduced performance and potentially shorter lifespan. It's essential to verify the device's operation and performance at the desired voltage and ensure it meets the application's requirements.

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