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NTMFS006N08MC - onsemi

Description: Shielded Gate MOSFET Technology; Max rDS(on) = 6.0 mΩ at VGS = 10 V, ID = 32 A; Max rDS(on) = 14.3 mΩ at VGS = 6 V, ID = 16 A; 50% Lower Qrr than Other MOSFET Suppliers; Soft Body diode; MSL1 Robust Package Design; 100% UIL Tested; RoHS Compliant

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PCB Footprints
NTMFS006N08MC - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE C
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NTMFS006N08MC Details

  • Manufacturer Part Number:

    NTMFS006N08MC

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Manufacturer Package Code:

    483AE

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Date Of Intro:

    2020-03-25

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    51 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    82 A

  • Drain-source On Resistance-Max:

    0.006 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    31 pF

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    78 W

  • Pulsed Drain Current-Max (IDM):

    216 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMFS006N08MC Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a 2-layer or 4-layer board with a solid ground plane on the bottom layer, and to place thermal vias under the device to dissipate heat efficiently.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, use a suitable heat sink, and ensure good thermal conductivity between the device and the heat sink. Additionally, consider using a thermal interface material (TIM) to fill any air gaps.
  • Exceeding the maximum junction temperature (Tj) rating can lead to reduced device lifespan, increased thermal resistance, and potentially even device failure. It's crucial to ensure that the device operates within the recommended temperature range to maintain reliability and performance.
  • The NTMFS006N08MC is an industrial-grade device, but it may not meet the specific requirements for high-reliability or automotive applications. It's essential to review the device's qualifications and certifications to ensure they meet the specific requirements of your application.
  • To prevent electrostatic discharge (ESD) damage, handle the device with ESD-protective equipment, such as wrist straps, mats, and bags. Ensure that the device is properly grounded during assembly, and consider using ESD-protective packaging and storage materials.

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NTMFS006N08MC Overview

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