Part Image

NTMFS008N12MCT1G - onsemi

Description: Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance; RoHS Compliant

Download NTMFS008N12MCT1G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NTMFS008N12MCT1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N
click to zoom
3D Models
NTMFS008N12MCT1G - onsemi  - 3D model - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N
click to zoom

NTMFS008N12MCT1G Details

  • Manufacturer Part Number:

    NTMFS008N12MCT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 5 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.2

  • Avalanche Energy Rating (Eas):

    101 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    120 V

  • Drain Current-Max (ID):

    79 A

  • Drain-source On Resistance-Max:

    0.008 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    4.9 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    102 W

  • Pulsed Drain Current-Max (IDM):

    352 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMFS008N12MCT1G Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the NTMFS008N12MCT1G is a 5x6mm pad with a 0.5mm keep-out zone around the device. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent damage to the device.
  • To ensure proper soldering, use a soldering iron with a temperature of 260°C (500°F) and a solder with a melting point of 217°C (423°F). Apply a small amount of solder to the pads, and use a soldering technique that minimizes the risk of overheating the device.
  • The maximum allowed voltage on the gate-source pin (VGS) of the NTMFS008N12MCT1G is ±20V. Exceeding this voltage can damage the device.
  • To protect the NTMFS008N12MCT1G from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the PCB and components are properly grounded. Avoid touching the device's pins or exposing it to static electricity.
  • The thermal resistance (RθJA) of the NTMFS008N12MCT1G is 40°C/W. This value represents the thermal resistance from the junction to the ambient air, and it's essential to consider this value when designing the thermal management system.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NTMFS008N12MCT1G Overview

Use the download button to access the NTMFS008N12MCT1G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like NTMFS, or try a keyword search, such as Power Field-Effect Transistors

Parts related to NTMFS008N12MCT1G

Showing 0 results