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NTMFS08N003C - onsemi

Description: Shielded Gate MOSFET Technology; Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 56A; Max rDS(on) = 8.1 mΩ at VGS = 6 V, ID = 28 A; 50% Lower Qrr than Other MOSFET Suppliers; Lowers Switching Noise/EMI; MSL1 Robust Package Design; 100% UIL Tested; RoHS Compliant

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PCB Footprints
NTMFS08N003C - onsemi PCB footprint - Other - Other - Power 56
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NTMFS08N003C Details

  • Manufacturer Part Number:

    NTMFS08N003C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    PQFN-8

  • Package Description:

    PQFN-8

  • Manufacturer Package Code:

    483AF

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    486 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    147 A

  • Drain-source On Resistance-Max:

    0.0031 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    80 pF

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    658 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    87 ns

  • Turn-on Time-Max (ton):

    52 ns

NTMFS08N003C Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves placing a thermal pad on the bottom of the package, using a minimum of 2 oz copper thickness, and ensuring a solid ground plane on the top and bottom layers. Additionally, it's recommended to use vias to connect the thermal pad to the ground plane.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and ambient temperature (Ta). Additionally, consider using a heat sink or thermal interface material to reduce thermal resistance, and ensure good airflow around the device.
  • The NTMFS08N003C has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures when handling the device. This includes using an ESD wrist strap or mat, and storing the device in an ESD-protected package.
  • Yes, the NTMFS08N003C is suitable for high-reliability and automotive applications. However, it's essential to follow the recommended operating conditions, and to ensure that the device is properly qualified and validated for the specific application.
  • The recommended soldering conditions for the NTMFS08N003C include a peak temperature of 260°C, a soldering time of 10 seconds, and a soldering method that follows the IPC J-STD-020 standard.

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NTMFS08N003C Overview

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