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NTMFS08N004C - onsemi

Description: Shielded Gate MOSFET Technology; Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 44 A; Max rDS(on) = 12.5 mΩ at VGS = 6 V, ID = 22 A; 50% Lower Qrr than Other MOSFET Suppliers; Lowers Switching Noise/EMI; MSL1 Robust Package Design; 100% UIL Tested; RoHS Compliant

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PCB Footprints
NTMFS08N004C - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A_1
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3D Models
NTMFS08N004C - onsemi  - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A_1
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NTMFS08N004C Details

  • Manufacturer Part Number:

    NTMFS08N004C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    PQFN-8

  • Package Description:

    PQFN-6

  • Manufacturer Package Code:

    483AE

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    486 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    126 A

  • Drain-source On Resistance-Max:

    0.0125 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    50 pF

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    637 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    50 ns

  • Turn-on Time-Max (ton):

    42 ns

NTMFS08N004C Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, use a suitable heat sink, and ensure good thermal conductivity between the device and the heat sink. Additionally, consider using a thermal interface material (TIM) to fill any gaps between the device and the heat sink.
  • The NTMFS08N004C has built-in ESD protection, but it's still important to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that all equipment is properly grounded. Avoid touching the device pins or exposing them to static electricity.
  • Yes, the NTMFS08N004C is suitable for high-reliability and automotive applications. However, it's essential to follow the recommended operating conditions, and ensure that the device is properly qualified and validated for the specific application. Consult with onsemi's application engineers for guidance on qualification and validation procedures.
  • The recommended soldering conditions for the NTMFS08N004C involve using a soldering iron with a temperature of 250°C to 260°C, and a soldering time of 3 to 5 seconds. Use a solder with a melting point of 217°C to 221°C, and ensure that the device is properly cleaned and dried before soldering.

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