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NTMFS08N2D5C - onsemi

Description: Max rDS(on) = 2.7 mΩ at VGS = 10 V, ID = 68 A; Max rDS(on) = 8 mΩ at VGS = 6 V, ID = 34 A; 50% Lower Qrr than Other MOSFET Suppliers; Lowers Switching Noise/EMI; MSL1 Robust Package Design; 100% UIL Tested; RoHS Compliant; Shielded Gate MOSFET Technology

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PCB Footprints
NTMFS08N2D5C - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AF ISSUE A
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NTMFS08N2D5C - onsemi  - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AF ISSUE A
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NTMFS08N2D5C Details

  • Manufacturer Part Number:

    NTMFS08N2D5C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Package Description:

    QFN-8

  • Manufacturer Package Code:

    483AF

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    600 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    166 A

  • Drain-source On Resistance-Max:

    0.0027 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    105 pF

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-N5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    138 W

  • Pulsed Drain Current-Max (IDM):

    823 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    60 ns

  • Turn-on Time-Max (ton):

    54 ns

NTMFS08N2D5C Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to have a solid copper plane on the bottom layer, connected to the thermal pad of the NTMFS08N2D5C. This helps to dissipate heat efficiently. Additionally, it's recommended to have vias under the device to connect the thermal pad to the copper plane.
  • To ensure the device is properly biased, it's essential to follow the recommended biasing scheme outlined in the datasheet. This typically involves connecting the gate to a voltage source through a resistor, and the drain to a load or another voltage source. Additionally, it's crucial to ensure the device is operated within the recommended voltage and current ratings.
  • Operating the NTMFS08N2D5C beyond the recommended temperature range can lead to reduced performance, decreased reliability, and potentially even device failure. The device may experience increased thermal resistance, reduced breakdown voltage, and increased leakage current, which can affect its overall performance and lifespan.
  • To protect the NTMFS08N2D5C from ESD, it's essential to handle the device with care, using anti-static wrist straps, mats, and packaging materials. Additionally, the device should be stored in a conductive foam or anti-static bag when not in use. During PCB assembly, ESD-sensitive components should be installed last to minimize exposure to ESD events.
  • The recommended soldering conditions for the NTMFS08N2D5C are a peak temperature of 260°C (500°F) for a maximum of 10 seconds, with a soldering iron temperature of 350°C (662°F). It's essential to follow these conditions to prevent damage to the device or the PCB.

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NTMFS08N2D5C Overview

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