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NTMFS0D5N04XMT1G - onsemi

Description: Latest 40V Standard Gate Level Power MOSFET Technology; Lower On-Resistance; Lower Gate Charge; Good Body Diode Softness

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NTMFS0D5N04XMT1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P CASE 506FA ISSUE O
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NTMFS0D5N04XMT1G - onsemi  - 3D model - Other - DFN5 5x6, 1.27P CASE 506FA ISSUE O
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NTMFS0D5N04XMT1G Details

  • Manufacturer Part Number:

    NTMFS0D5N04XMT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFN5 5x6, 1.27P

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    506FA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    1434 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    414 A

  • Drain-source On Resistance-Max:

    0.00052 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    89.3 pF

  • JESD-30 Code:

    R-PDSO-F6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    163 W

  • Pulsed Drain Current-Max (IDM):

    3152 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMFS0D5N04XMT1G Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the device and to connect it to a thermal plane or a heat sink.
  • To ensure proper biasing, follow the recommended operating conditions and biasing schemes outlined in the datasheet. This typically involves setting the gate-source voltage (Vgs) and drain-source voltage (Vds) within the specified ranges, and using a suitable gate driver or bias circuit.
  • During reliability testing, it's essential to monitor parameters such as junction temperature (Tj), drain-source voltage (Vds), gate-source voltage (Vgs), and drain current (Id). These parameters can help identify potential issues and ensure the device operates within its specified limits.
  • To handle ESD protection, follow proper handling and storage procedures, use ESD-protective packaging and materials, and implement ESD protection circuits or devices on the PCB. The NTMFS0D5N04XMT1G has an integrated ESD protection diode, but additional protection measures may still be necessary.
  • For optimal soldering and assembly, follow the recommended soldering profiles and techniques outlined in the datasheet or onsemi's application notes. This typically involves using a controlled soldering process, such as reflow soldering, and ensuring the device is properly aligned and secured to the PCB.

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NTMFS0D5N04XMT1G Overview

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