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NTMFS0D7N04XLT1G - onsemi

Description: Latest 40V Logic Gate Level Power MOSFET Technology.; Lowest On-Resistance in 5x6 Package.; Less Peak Reverse Recovery Current with Good Softness Performance.; Lower Output Charge by Smaller Ouput Capacitance.

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NTMFS0D7N04XLT1G - onsemi PCB footprint - Other - Other - DFN5 5x6 , 1.27P (SO−8FL) CASE 488AA ISSUE N_24
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NTMFS0D7N04XLT1G - onsemi  - 3D model - Other - DFN5 5x6 , 1.27P (SO−8FL) CASE 488AA ISSUE N_24
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NTMFS0D7N04XLT1G Details

  • Manufacturer Part Number:

    NTMFS0D7N04XLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    27 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    470 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    349 A

  • Drain-source On Resistance-Max:

    0.0009 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    40 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    167 W

  • Pulsed Drain Current-Max (IDM):

    1667 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMFS0D7N04XLT1G Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the device and to connect it to a thermal plane or a heat sink.
  • To ensure proper biasing, follow the recommended operating conditions in the datasheet. Make sure to provide a stable voltage supply, and use a suitable bias resistor to set the gate-source voltage. Additionally, ensure the device is operated within the recommended temperature range.
  • Handle the device with care to prevent damage. Avoid touching the pins or the die, as this can cause electrostatic discharge (ESD) damage. Use an ESD wrist strap or mat, and handle the device by the package only. Also, avoid bending or flexing the leads, and store the device in a dry, cool place.
  • To determine a suitable gate driver, consider the device's gate charge, peak current, and voltage requirements. Choose a gate driver that can provide the necessary current and voltage to switch the device quickly and efficiently. Also, ensure the gate driver is compatible with the device's logic level and has a suitable propagation delay.
  • When paralleling multiple devices, ensure that each device has its own gate resistor and that the gate resistors are matched to prevent oscillations. Also, make sure the devices are thermally coupled to prevent thermal runaway. Use a common source connection and a single gate driver to control all devices in parallel.

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NTMFS0D7N04XLT1G Overview

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