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NTMFS0D9N04XLT1G - onsemi

Description: Less Peak Reverse Recovery Current with Good Softness Performance.; Lowest On-Resistance in 5x6 Package.; Latest 40V Logic Gate Level Power MOSFET Technology.; Lower Output Charge by Smaller Output Capacitance.

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NTMFS0D9N04XLT1G - onsemi PCB footprint - Other - Other - DFN5 5x6 , 1.27P (SO−8FL) CASE 488AA ISSUE N_24
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NTMFS0D9N04XLT1G - onsemi  - 3D model - Other - DFN5 5x6 , 1.27P (SO−8FL) CASE 488AA ISSUE N_24
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NTMFS0D9N04XLT1G Details

  • Manufacturer Part Number:

    NTMFS0D9N04XLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    273 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    278 A

  • Drain-source On Resistance-Max:

    0.0011 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    23 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    136 W

  • Pulsed Drain Current-Max (IDM):

    1193 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMFS0D9N04XLT1G Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the device and to connect it to a thermal plane or a heat sink.
  • To ensure proper biasing, follow the recommended operating conditions and biasing schemes outlined in the datasheet. This typically involves setting the gate-source voltage (Vgs) and drain-source voltage (Vds) within the specified ranges, and using a suitable gate driver or bias circuit.
  • Operating the device beyond the recommended temperature range can lead to reduced performance, decreased reliability, and potentially even device failure. It's essential to ensure the device operates within the specified temperature range to maintain its electrical characteristics and lifespan.
  • To handle ESD protection, follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Additionally, consider implementing ESD protection circuits or devices, such as TVS diodes or ESD protection arrays, in the system design.
  • For optimal soldering and assembly, follow the recommended soldering profiles and techniques outlined in the datasheet or onsemi's application notes. This typically involves using a controlled soldering process, such as reflow soldering, and ensuring proper component placement and orientation.

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NTMFS0D9N04XLT1G Overview

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