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NTMFS2D3N04XMT1G - onsemi

Description: Latest 40V Standard Gate Level Power MOSFET Technology; Lower On-Resistance; Lower Gate Charge; Good Body Diode Softness

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PCB Footprints
NTMFS2D3N04XMT1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N-2022
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3D Models
NTMFS2D3N04XMT1G - onsemi  - 3D model - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N-2022
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NTMFS2D3N04XMT1G Details

  • Manufacturer Part Number:

    NTMFS2D3N04XMT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    21 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    155 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    29 A

  • Drain-source On Resistance-Max:

    0.00235 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    24 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    53 W

  • Pulsed Drain Current-Max (IDM):

    682 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMFS2D3N04XMT1G Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a copper plane on the PCB, and ensuring good thermal conductivity between the device and the PCB. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, provide adequate heat sinking, and consider derating the device's power handling capabilities. Additionally, ensure that the PCB and surrounding components are rated for the expected operating temperatures.
  • The NTMFS2D3N04XMT1G has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures when handling the device. Use an ESD wrist strap or mat, and ensure that the PCB and components are properly grounded during assembly and testing.
  • Yes, the NTMFS2D3N04XMT1G can be used in switching regulator applications. However, it's essential to ensure that the device is operated within its recommended switching frequency range and that the PCB layout is optimized for high-frequency operation. Additionally, consider using a gate driver IC to ensure proper gate drive and minimize switching losses.
  • The recommended gate drive voltage for the NTMFS2D3N04XMT1G is between 4.5V and 10V. However, it's essential to ensure that the gate drive voltage is compatible with the specific application requirements and that the device is operated within its recommended operating conditions.

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NTMFS2D3N04XMT1G Overview

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