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NTMFS3D2N10MDT1G - onsemi

Description: Shielded Gate MOSFET Technology ; Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 50 A ; Max rDS(on) = 5.8 mΩ at VGS = 6 V, ID = 30.5 A ; 50% lower Qrr than other MOSFET suppliers ; Lowers switching noise/EMI ; MSL1 robust package design ; 100% UIL tested ; RoHS Compliant ; Very Low RDS*Qoss

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PCB Footprints
NTMFS3D2N10MDT1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 506EZ ISSUE A
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3D Models
NTMFS3D2N10MDT1G - onsemi  - 3D model - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 506EZ ISSUE A
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NTMFS3D2N10MDT1G Details

  • Manufacturer Part Number:

    NTMFS3D2N10MDT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFN5 5x6, 1.27P (SO−8FL)

  • Package Description:

    DFN5, SO-8FL, 6 PIN

  • Manufacturer Package Code:

    506EZ

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    726 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    142 A

  • Drain-source On Resistance-Max:

    0.0035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    24 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    155 W

  • Pulsed Drain Current-Max (IDM):

    879 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMFS3D2N10MDT1G Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a 2-layer or 4-layer board with a solid ground plane, placing thermal vias under the device, and using a thermal pad to dissipate heat. Refer to the onsemi application note AND9093/D for more details.
  • To ensure proper biasing, follow the recommended biasing scheme in the datasheet, which includes a VCC of 3.3V, a VGS of 2.5V, and a VDS of 10V. Additionally, use a suitable gate resistor and ensure the input signals are within the recommended voltage ranges.
  • During reliability testing, it's essential to monitor parameters such as drain-source voltage (VDS), gate-source voltage (VGS), drain current (ID), and junction temperature (TJ). These parameters can help identify potential issues and ensure the device operates within its recommended specifications.
  • To handle ESD protection, follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits in the design, such as TVS diodes or ESD protection arrays. Additionally, ensure the device is properly grounded during assembly and testing.
  • The recommended soldering conditions for the NTMFS3D2N10MDT1G include a peak temperature of 260°C, a soldering time of 10 seconds, and a soldering method that follows the IPC-J-STD-020D standard. Refer to the onsemi application note AND9095/D for more details.

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NTMFS3D2N10MDT1G Overview

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