Part Image

NTMFS4841NHT1G - onsemi

Description: ON Semiconductor NTMFS4841NHT1G N-channel MOSFET Transistor, 59 A, 30 V, 8-Pin SOIC

Download NTMFS4841NHT1G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NTMFS4841NHT1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE H
click to zoom
3D Models
NTMFS4841NHT1G - onsemi  - 3D model - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE H
click to zoom

NTMFS4841NHT1G Details

  • Manufacturer Part Number:

    NTMFS4841NHT1G

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DFN

  • Package Description:

    LEAD FREE, CASE 488AA-01, DFN6, SOP-8

  • Pin Count:

    8

  • Manufacturer Package Code:

    CASE 488AA-01

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    98 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    13.5 A

  • Drain-source On Resistance-Max:

    0.0116 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    41.7 W

  • Pulsed Drain Current-Max (IDM):

    177 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMFS4841NHT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper thermal design, use a heat sink if necessary, and follow the recommended operating conditions. Also, consider using a thermal interface material to improve heat transfer.
  • The NTMFS4841NHT1G has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is handled in a static-safe environment.
  • Yes, the NTMFS4841NHT1G is qualified for automotive and high-reliability applications. However, additional testing and validation may be required to meet specific industry standards or customer requirements.
  • Use a systematic approach to troubleshoot issues, starting with a review of the device's operating conditions, PCB layout, and component selection. Check for signs of overheating, electrical overstress, or other environmental factors that may be contributing to the issue.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NTMFS4841NHT1G Overview

Use the download button to access the NTMFS4841NHT1G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like NTMFS, or try a keyword search, such as Power Field-Effect Transistors

Parts related to NTMFS4841NHT1G

Showing 0 results

NTMFS4841NHT1G Alternates

Showing results

Image Part Number Model
Part Image NTMFS4841NHT1G Rochester Electronics LLC

13.5A, 30V, 0.0116ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 488AA-01, DFN6, SOP-8

Part Image NTMFS4841NHT3G onsemi

Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET