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NTMFS4899NFT1G - onsemi

Description: Integrated Schottky and Low RDS(on); Low Capcitance and Optimized Qg

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NTMFS4899NFT1G Details

  • Manufacturer Part Number:

    NTMFS4899NFT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DFN5 5X6, 1.27P (SO 8FL)

  • Package Description:

    SOP-8

  • Pin Count:

    5

  • Manufacturer Package Code:

    488AA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    84 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    10.4 A

  • Drain-source On Resistance-Max:

    0.0075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    165 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    48 W

  • Pulsed Drain Current-Max (IDM):

    188 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMFS4899NFT1G Frequently Asked Questions (FAQs)

  • The maximum operating temperature for the NTMFS4899NFT1G is 150°C, as specified in the datasheet.
  • To ensure safe operating area, follow the guidelines in the datasheet for voltage, current, and power dissipation. Additionally, consider the application's thermal and electrical requirements to prevent overheating and overcurrent conditions.
  • The recommended gate drive voltage for the NTMFS4899NFT1G is between 4.5V and 10V, with a typical value of 5V to 6V for optimal switching performance.
  • To minimize power losses, ensure proper thermal management, use a suitable heat sink, and optimize the gate drive circuit to reduce switching losses. Additionally, consider using a low-loss gate driver and minimizing the MOSFET's on-state resistance (RDS(on)).
  • The NTMFS4899NFT1G has an internal ESD protection diode, but it's still recommended to follow proper ESD handling and storage procedures to prevent damage. Use an ESD wrist strap or mat, and store the devices in anti-static packaging.

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NTMFS4899NFT1G Overview

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Part Image NTMFS4899NFT3G onsemi

Power Field-Effect Transistor, 10.4A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET