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NTMFS4C024NT1G - onsemi

Description: Low RDS(on) to Minimize Conduction Losses; Low Capacitance to Minimize Driver Losses; Optimized Gate Charge to Minimize Switching Losses; RoHS Compliant

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NTMFS4C024NT1G Details

  • Manufacturer Part Number:

    NTMFS4C024NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2016-06-01

  • Manufacturer:

    onsemi

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    84 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    11.9 A

  • Drain-source On Resistance-Max:

    0.004 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    59 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    33 W

  • Pulsed Drain Current-Max (IDM):

    174 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMFS4C024NT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power dissipation at high temperatures.
  • The maximum allowed voltage on the gate pin is 20V, but it's recommended to keep it below 15V to ensure reliable operation and prevent damage to the device.
  • Yes, but ensure that the device is properly snubbed and the PCB layout is optimized for high-frequency operation. Also, consider the device's switching losses and thermal performance.
  • Use ESD protection devices, such as TVS diodes or ESD suppressors, on the input and output pins. Also, follow proper handling and storage procedures to prevent ESD damage.

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NTMFS4C024NT1G Overview

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