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NTMFS4C028NT1G - onsemi

Description: Low RDS(on) to Minimize Conduction Losses; Low Capacitance to Minimize Driver Losses; Optimized Gate Charge to Minimize Switching Losses; RoHS Compliant

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NTMFS4C028NT1G - onsemi  - 3D model
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NTMFS4C028NT1G Details

  • Manufacturer Part Number:

    NTMFS4C028NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8, 6 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2016-08-08

  • Manufacturer:

    onsemi

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    42 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    0.00473 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    25.5 W

  • Pulsed Drain Current-Max (IDM):

    146 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMFS4C028NT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended for optimal thermal performance. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended temperature range (TJ = -40°C to 150°C). Use a heat sink or thermal pad to dissipate heat, and avoid thermal hotspots. Also, ensure that the device is properly soldered and mounted to prevent thermal resistance.
  • Handle the device by the body, avoiding touching the leads or die. Store the device in a dry, cool place, away from direct sunlight and moisture. Avoid bending or flexing the leads, and use anti-static packaging to prevent ESD damage.
  • The optimal gate resistor value depends on the specific application and switching frequency. A general guideline is to use a value between 10 ohms and 100 ohms. A higher value can reduce EMI, but may increase switching losses. Consult the application note or onsemi support for specific guidance.
  • When paralleling multiple devices, ensure that each device has its own gate resistor and that the gate signals are properly synchronized. Use a common source inductor and ensure that the devices are thermally coupled to prevent thermal runaway. Consult the application note or onsemi support for specific guidance.

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NTMFS4C028NT1G Overview

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