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NTMFS4C06NT1G - onsemi

Description: Low RDSon; Low Capacitance; Optimized Gate Charge

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NTMFS4C06NT1G Details

  • Manufacturer Part Number:

    NTMFS4C06NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFN5 5X6, 1.27P (SO 8FL)

  • Package Description:

    SOP-6

  • Pin Count:

    5

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    53 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    68 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.004 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    40 pF

  • JESD-30 Code:

    R-PDSO-F6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    30.5 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMFS4C06NT1G Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for NTMFS4C06NT1G is a 5x5mm QFN package with a 0.5mm pitch. The datasheet provides a recommended land pattern and solder mask design guidelines.
  • To ensure reliable operation of NTMFS4C06NT1G in high-temperature environments, it is recommended to follow the thermal management guidelines provided in the datasheet, including proper heat sinking and thermal interface material selection.
  • The maximum allowed voltage on the gate of NTMFS4C06NT1G is 12V, as specified in the datasheet. Exceeding this voltage may damage the device.
  • Yes, NTMFS4C06NT1G can be used in switching applications, but it is essential to follow the recommended switching frequency and duty cycle guidelines to avoid overheating and ensure reliable operation.
  • To protect NTMFS4C06NT1G from electrostatic discharge (ESD), it is recommended to follow proper ESD handling and storage procedures, including the use of ESD-safe materials and equipment.

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NTMFS4C06NT1G Overview

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