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NTMFS4C10NT1G - onsemi

Description: Low RDS(on); Low Capacitance; Optimized Gate Charge; RoHS Compliant

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NTMFS4C10NT1G Details

  • Manufacturer Part Number:

    NTMFS4C10NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFN5 5X6, 1.27P (SO 8FL)

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Pin Count:

    5

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    53 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    31 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    8.2 A

  • Drain-source On Resistance-Max:

    0.00695 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    162 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    23.6 W

  • Pulsed Drain Current-Max (IDM):

    340 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMFS4C10NT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the package.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature and adjust the system design accordingly.
  • Follow the JEDEC J-STD-020D.1 standard for soldering and rework. Use a soldering iron with a temperature range of 350°C to 370°C, and ensure the device is not exposed to temperatures above 260°C for more than 10 seconds.
  • Use ESD-protective packaging, wrist straps, and mats. Ensure all personnel handling the device are grounded, and use ESD-protected workstations and tools.
  • Store the devices in their original packaging, away from direct sunlight and moisture. Handle the devices by the body, avoiding touching the leads or die. Use anti-static bags or tubes for storage and transportation.

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NTMFS4C10NT1G Overview

Use the download button to access the NTMFS4C10NT1G 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like NTMFS, or try a keyword search, such as Power Field-Effect Transistors

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Part Image NTMFS4C10NT3G onsemi

Power Field-Effect Transistor, 46A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET