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NTMFS4C908NAT3G - onsemi

Description: Optimized Gate Charge; Low RDS(on); Low Capacitance

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NTMFS4C908NAT3G - onsemi  - 3D model
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NTMFS4C908NAT3G Details

  • Manufacturer Part Number:

    NTMFS4C908NAT3G

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    42 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    0.00747 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    39 pF

  • JESD-30 Code:

    R-PDSO-F6

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    25.5 W

  • Pulsed Drain Current-Max (IDM):

    144 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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NTMFS4C908NAT3G Overview

Use the download button to access the NTMFS4C908NAT3G 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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