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NTMFS4D0N08XT1G - onsemi

Description: Low QRR, Soft Recovery Body Diode; Low RDS(on) to Minimize Conduction Losses; Low QG and Capacitance to Minimize Driver Losses; These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS Compliant

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PCB Footprints
NTMFS4D0N08XT1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N_1
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3D Models
NTMFS4D0N08XT1G - onsemi  - 3D model - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N_1
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NTMFS4D0N08XT1G Details

  • Manufacturer Part Number:

    NTMFS4D0N08XT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    25 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    97 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    119 A

  • Drain-source On Resistance-Max:

    0.0035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    11 pF

  • JESD-30 Code:

    R-PDSO-F6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    107 W

  • Pulsed Drain Current-Max (IDM):

    469 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMFS4D0N08XT1G Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the device and to connect it to a thermal plane or a heat sink.
  • To ensure proper biasing, follow the recommended operating conditions in the datasheet. Make sure to provide a stable voltage supply, and use a suitable bias resistor to set the gate-source voltage. Additionally, ensure the device is operated within the recommended temperature range.
  • Critical parameters to monitor during device operation include drain-source voltage, drain current, gate-source voltage, and junction temperature. Monitoring these parameters helps prevent device damage and ensures optimal performance.
  • To protect the device from ESD, follow proper handling and storage procedures. Use an ESD wrist strap or mat, and ensure the device is stored in an ESD-safe environment. During PCB assembly, use ESD-safe materials and tools, and consider adding ESD protection devices to the circuit.
  • The recommended soldering conditions for the NTMFS4D0N08XT1G include a peak temperature of 260°C, a soldering time of 10-30 seconds, and a soldering method that follows the IPC J-STD-020 standard.

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NTMFS4D0N08XT1G Overview

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