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NTMFS4D2N10MDT1G - onsemi

Description: Shielded Gate MOSFET Technology ; Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A ; Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A ; 50% lower Qrr than other MOSFET suppliers ; Lowers switching noise/EMI ; MSL1 robust package design ; 100% UIL tested ; RoHS Compliant ; Very Low RDS*Qoss

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NTMFS4D2N10MDT1G - onsemi PCB footprint - Other - Other - NTMFS4D2N10MDT1G-2
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NTMFS4D2N10MDT1G - onsemi  - 3D model - Other - NTMFS4D2N10MDT1G-2
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NTMFS4D2N10MDT1G Details

  • Manufacturer Part Number:

    NTMFS4D2N10MDT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Date Of Intro:

    2020-11-04

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    486 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    113 A

  • Drain-source On Resistance-Max:

    0.0043 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    23 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    132 W

  • Pulsed Drain Current-Max (IDM):

    763 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMFS4D2N10MDT1G Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended derating curves, ensure proper heat sinking, and consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink.
  • The NTMFS4D2N10MDT1G has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures, such as using an ESD wrist strap or mat, and ensuring that the device is handled in a static-safe environment.
  • Yes, the NTMFS4D2N10MDT1G is qualified for automotive and high-reliability applications, but it's essential to follow the recommended qualification and testing procedures, and to consult with onsemi's application engineers for specific guidance.
  • To troubleshoot issues with the device, start by reviewing the datasheet and application notes, then consult with onsemi's technical support team or a qualified engineer. It's also recommended to perform thorough testing and validation of the device in the specific application.

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NTMFS4D2N10MDT1G Overview

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