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NTMFS4H02NFT3G - onsemi

Description: Obsolete - Single N−Channel Power MOSFET 25V, 193A, 1.4mΩ

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PCB Footprints
NTMFS4H02NFT3G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N_1
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3D Models
NTMFS4H02NFT3G - onsemi  - 3D model - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N_1
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NTMFS4H02NFT3G Details

  • Manufacturer Part Number:

    NTMFS4H02NFT3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DFN5 5X6, 1.27P (SO 8FL)

  • Package Description:

    SO8-FL, 6 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    66 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    193 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Operating Temperature-Max:

    150 °C

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    83 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Time@Peak Reflow Temperature-Max (s):

    30

NTMFS4H02NFT3G Frequently Asked Questions (FAQs)

  • The recommended PCB layout involves keeping the drain and source pins as close as possible to minimize inductance and resistance. A thermal pad on the bottom of the package should be connected to a copper plane on the PCB to dissipate heat. A heat sink or thermal interface material can also be used to improve thermal management.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be set between 4.5V to 10V, and the drain-source voltage (Vds) should be set within the recommended operating range. A gate driver with a suitable voltage rating and current capability should be used to drive the gate.
  • Monitor the junction temperature (Tj), drain-source voltage (Vds), and drain current (Id) to prevent overheating and ensure reliability. The device should be operated within the recommended temperature range (-55°C to 150°C) and the maximum allowed drain current (Id) should not be exceeded.
  • Use ESD protection devices such as TVS diodes or ESD arrays on the PCB to protect the device from ESD. Implement EOS protection by using voltage regulators, current limiters, and fuses to prevent overvoltage and overcurrent conditions.
  • Perform characterization tests such as switching time, rise and fall times, and drain-source resistance (Rds(on)) measurements. Validate the device's performance under various operating conditions, including temperature, voltage, and current sweeps.

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NTMFS4H02NFT3G Overview

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