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NTMFS5C430NT1G - onsemi

Description: Low RDS(on); SO8FL package (5x6); Low input capacitance; RoHS Compliant

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PCB Footprints
NTMFS5C430NT1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N_2
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3D Models
NTMFS5C430NT1G - onsemi  - 3D model - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N_2
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NTMFS5C430NT1G Details

  • Manufacturer Part Number:

    NTMFS5C430NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2016-06-09

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    338 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    185 A

  • Drain-source On Resistance-Max:

    0.0017 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    106 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NTMFS5C430NT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The device should be placed near a thermal pad or a heat sink to ensure good heat dissipation.
  • The device requires a stable input voltage (VCC) and a proper biasing circuit to ensure optimal performance. A voltage regulator or a voltage reference should be used to maintain a stable VCC. The biasing circuit should be designed to provide a stable voltage and current to the device.
  • The critical timing parameters for the NTMFS5C430NT1G include the input rise and fall times, propagation delay, and output enable time. To ensure these parameters are met, the device should be driven by a signal source with a fast rise and fall time, and the output should be properly terminated to prevent reflections.
  • The NTMFS5C430NT1G has built-in ESD protection, but additional protection measures can be taken to prevent damage from electrostatic discharge. This includes using ESD-protective packaging, handling the device with ESD-protective equipment, and implementing ESD-protection circuits in the design.
  • The device has a maximum junction temperature of 150°C. To ensure reliable operation, the device should be operated within the recommended temperature range, and proper thermal management techniques should be used, such as heat sinks, thermal interfaces, and airflow management.

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