Part Image

NTMFS5C442NT1G - onsemi

Description: Low RDS(on); SO8FL package (5x6); Low input capacitance; RoHS Compliant

Download NTMFS5C442NT1G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NTMFS5C442NT1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N_2
click to zoom
3D Models
NTMFS5C442NT1G - onsemi  - 3D model - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N_2
click to zoom

NTMFS5C442NT1G Details

  • Manufacturer Part Number:

    NTMFS5C442NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    220 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    140 A

  • Drain-source On Resistance-Max:

    0.0023 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    40 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    83 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMFS5C442NT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper thermal management, use a heat sink or thermal pad, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The SOA is typically defined by the device's voltage and current ratings. For NTMFS5C442NT1G, the SOA is limited by the maximum voltage rating of 40V and the maximum current rating of 4.2A.
  • Use proper ESD handling procedures, such as wearing an ESD strap, using an ESD mat, and storing the device in an ESD-safe environment. Also, ensure that the PCB design includes ESD protection components, such as TVS diodes or ESD arrays.
  • A soldering profile with a peak temperature of 260°C (500°F) and a dwell time of 10-30 seconds is recommended. Ensure that the device is not exposed to temperatures above 260°C (500°F) for an extended period.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NTMFS5C442NT1G Overview

Use the download button to access the NTMFS5C442NT1G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like NTMFS, or try a keyword search, such as Power Field-Effect Transistors

Parts related to NTMFS5C442NT1G

Showing 0 results