Part Image

NTMFS5C612NLWFT1G - onsemi

Description: MOSFET N-CH 60V 235A 5DFN

Download NTMFS5C612NLWFT1G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NTMFS5C612NLWFT1G - onsemi PCB footprint - Other - Other - NTMFS5C612NLWFT1G-2
click to zoom
3D Models
NTMFS5C612NLWFT1G - onsemi  - 3D model - Other - NTMFS5C612NLWFT1G-2
click to zoom

NTMFS5C612NLWFT1G Details

  • Manufacturer Part Number:

    NTMFS5C612NLWFT1G

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    DFN-5

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    70 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    451 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain-source On Resistance-Max:

    0.0015 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NTMFS5C612NLWFT1G Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a 2-layer or 4-layer board with a solid ground plane, placing thermal vias under the device, and using a thermal pad connected to the ground plane. A minimum of 2 oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, use a suitable thermal interface material, and ensure good airflow around the device. Additionally, consider using a heat sink or a thermal management system to keep the junction temperature below the maximum rating.
  • The NTMFS5C612NLWFT1G has built-in ESD protection, but it's still important to follow standard ESD handling precautions, such as using an ESD wrist strap, mat, or workstation, and storing the devices in anti-static packaging. Avoid touching the device pins or handling them in a way that could generate static electricity.
  • Yes, the NTMFS5C612NLWFT1G is suitable for high-reliability and automotive applications. It's AEC-Q101 qualified and meets the requirements for automotive-grade devices. However, it's essential to follow the recommended operating conditions, and ensure that the device is used within its specified ratings and guidelines.
  • The recommended soldering conditions for the NTMFS5C612NLWFT1G include a peak temperature of 260°C, a soldering time of 10-30 seconds, and a soldering method that meets the IPC J-STD-020 standard. For rework, use a low-temperature soldering iron and follow the manufacturer's guidelines to avoid damaging the device.

Trust Checks

This model has been verified by system checks.
System Verified
Sponsored

NTMFS5C612NLWFT1G Overview

Use the download button to access the NTMFS5C612NLWFT1G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like NTMFS, or try a keyword search, such as Power Field-Effect Transistors

Parts related to NTMFS5C612NLWFT1G

Showing 0 results

NTMFS5C612NLWFT1G Alternates

Showing results

Image Part Number Model
Part Image NTMFS5C612NLT1G onsemi

Power Field-Effect Transistor, 60V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NTMFS5C612NL3G onsemi

Power Field-Effect Transistor, 226A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET