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NTMFS5C646NLT1G - onsemi

Description: Low QG and Capacitance to Minimize Driver Losses; Low RDS(on) to Minimize Conduction Losses; Small Footprint (5 x 6 mm) for Compact Design; RoHS Compliant

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NTMFS5C646NLT1G - onsemi - PCB symbol
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PCB Footprints
NTMFS5C646NLT1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N
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3D Models
NTMFS5C646NLT1G - onsemi - 3D model - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N
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NTMFS5C646NLT1G Details

  • Manufacturer Part Number:

    NTMFS5C646NLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFN5 5X6, 1.27P (SO 8FL)

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    185 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    93 A

  • Drain-source On Resistance-Max:

    0.0063 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    79 W

  • Pulsed Drain Current-Max (IDM):

    750 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NTMFS5C646NLT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended temperature range (TJ = -40°C to 150°C). Use a heat sink or thermal pad to maintain a safe junction temperature. Monitor the device's thermal performance and adjust the system design accordingly.
  • The NTMFS5C646NLT1G has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures when handling the device. Use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-safe environment.
  • Yes, the NTMFS5C646NLT1G is AEC-Q101 qualified, making it suitable for automotive and high-reliability applications. However, ensure that the device is used within the recommended operating conditions and that the system design meets the required reliability and safety standards.
  • Check the input voltage, output voltage, and current consumption. Verify that the device is properly connected and that the output capacitor is of sufficient value. Consult the datasheet and application notes for troubleshooting guidelines and design recommendations.

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NTMFS5C646NLT1G Overview

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