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NTMFS5H600NLT1G - onsemi

Description: Low RDS(on); Marketing leading FOM; RoHS Compliant

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PCB Footprints
NTMFS5H600NLT1G - onsemi PCB footprint - Other - Other - DFN5, 4.90 x 5.90 x 1.00, 1.27P CASE 506EZ ISSUE B
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3D Models
NTMFS5H600NLT1G - onsemi  - 3D model - Other - DFN5, 4.90 x 5.90 x 1.00, 1.27P CASE 506EZ ISSUE B
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NTMFS5H600NLT1G Details

  • Manufacturer Part Number:

    NTMFS5H600NLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFN5 5x6, 1.27P (SO−8FL)

  • Package Description:

    SO-8FL, DFN5, 5 PIN

  • Manufacturer Package Code:

    506EZ

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    338 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    250 A

  • Drain-source On Resistance-Max:

    0.0017 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    160 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NTMFS5H600NLT1G Frequently Asked Questions (FAQs)

  • A 2-layer PCB with a thermal via array underneath the package is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended junction temperature (Tj) range of -40°C to 150°C. Implement a thermal management system, such as a heat sink or fan, to keep the device temperature below 125°C.
  • A gate drive circuit with a resistance of 10-20 ohms and a capacitance of 1-10 nF is recommended. This will provide a fast switching time and minimize ringing.
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the MOSFET from overvoltage. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • Use a wire bonding technique with a 1-2 mil aluminum or gold wire. For soldering, use a solder with a melting point above 220°C and follow the recommended soldering profile to prevent damage to the device.

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NTMFS5H600NLT1G Overview

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