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NTMFS5H610NLT1G - onsemi

Description: Low RDS(on); Marketing leading FOM; RoHS Compliant

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NTMFS5H610NLT1G - onsemi PCB footprint - Other - Other - DFN5 5x6 , 1.27P (SO−8FL) CASE 488AA ISSUE N_24
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NTMFS5H610NLT1G - onsemi  - 3D model - Other - DFN5 5x6 , 1.27P (SO−8FL) CASE 488AA ISSUE N_24
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NTMFS5H610NLT1G Details

  • Manufacturer Part Number:

    NTMFS5H610NLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 5 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    175 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    44 A

  • Drain-source On Resistance-Max:

    0.01 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    43 W

  • Pulsed Drain Current-Max (IDM):

    222 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NTMFS5H610NLT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The device should be placed near a thermal pad or a heat sink to dissipate heat efficiently.
  • The device requires a stable input voltage (VCC) and a proper biasing circuit to ensure optimal performance. A voltage regulator or a voltage reference should be used to maintain a stable input voltage.
  • The critical timing parameters include the input rise and fall times, propagation delay, and output enable time. These parameters can be ensured by using a proper clock signal, meeting the input setup and hold times, and using a suitable output buffer.
  • The device requires a specific power sequencing to prevent latch-up or damage. The recommended power sequencing is to apply VCC before applying any input signals, and to remove input signals before removing VCC.
  • The device is sensitive to electrostatic discharge (ESD). Recommended ESD protection measures include using ESD protection diodes, following proper handling and storage procedures, and using an ESD-protected workstation.

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