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NTMFS6B03NT1G - onsemi

Description: Obsolete - Single N-Channel Power MOSFET 100 V, 132 A, 4.8 mΩ

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NTMFS6B03NT1G - onsemi - PCB symbol
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NTMFS6B03NT1G - onsemi PCB footprint - Other - Other - NTMFS6B03NT1G-4
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NTMFS6B03NT1G Details

  • Manufacturer Part Number:

    NTMFS6B03NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DFN5 5x6, 1.27P (SO−8FL)

  • Package Description:

    SOP-8

  • Manufacturer Package Code:

    506EZ

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    180 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    19 A

  • Drain-source On Resistance-Max:

    0.0048 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    165 W

  • Pulsed Drain Current-Max (IDM):

    470 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMFS6B03NT1G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NTMFS6B03NT1G is -55°C to 150°C.
  • To ensure reliability, follow the recommended assembly and handling procedures, and ensure that the device is operated within the specified voltage and current ratings. Additionally, consider using a robust PCB design, and ensure that the device is properly soldered and cleaned.
  • The recommended PCB layout for the NTMFS6B03NT1G includes a thermal pad connected to a large copper area to dissipate heat. A minimum of 2 oz copper thickness is recommended. Additionally, ensure that the PCB is designed to minimize thermal resistance and maximize heat dissipation.
  • Handle the NTMFS6B03NT1G by the body, avoiding touching the leads or die. Store the devices in a dry, cool place, away from direct sunlight and moisture. Use anti-static packaging and handling procedures to prevent electrostatic discharge (ESD) damage.
  • The recommended soldering conditions for the NTMFS6B03NT1G include a peak temperature of 260°C, with a soldering time of 10 seconds or less. Use a solder with a melting point of 180°C to 190°C.

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NTMFS6B03NT1G Overview

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Part Image NTMFS6B03NT3G onsemi

Power Field-Effect Transistor, 19A I(D), 100V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET