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NTMFS6H801NLT1G - onsemi

Description: Logic level drive capable; Small Footprint (5x6mm); Low RDS (on); Low QG and Capacitance; These Devices are Pb−Free and are RoHS Compliant

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PCB Footprints
NTMFS6H801NLT1G - onsemi PCB footprint - Other - Other - DFN5 5x6 , 1.27P (SO−8FL) CASE 488AA ISSUE N_24
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NTMFS6H801NLT1G - onsemi  - 3D model - Other - DFN5 5x6 , 1.27P (SO−8FL) CASE 488AA ISSUE N_24
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NTMFS6H801NLT1G Details

  • Manufacturer Part Number:

    NTMFS6H801NLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Date Of Intro:

    2020-03-05

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    706 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    160 A

  • Drain-source On Resistance-Max:

    0.0033 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    30 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    167 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NTMFS6H801NLT1G Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the device and to connect it to a thermal plane or a heat sink.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including the maximum junction temperature (Tj) and storage temperature (Tstg). Additionally, consider using a heat sink, thermal interface material, and ensuring good airflow around the device.
  • The NTMFS6H801NLT1G has built-in ESD protection, but it's still important to follow proper handling and storage precautions to prevent damage. This includes using an anti-static wrist strap, anti-static bags, and avoiding touching the device's pins or leads.
  • Yes, the NTMFS6H801NLT1G is suitable for high-reliability and automotive applications. It's AEC-Q101 qualified and meets the requirements for automotive-grade devices. However, it's essential to follow the recommended operating conditions and to consult with onsemi's application notes and reliability reports.
  • The recommended soldering conditions for the NTMFS6H801NLT1G include a peak temperature of 260°C, a soldering time of 10-30 seconds, and a soldering method that meets the IPC J-STD-020 standard. For rework, it's recommended to use a rework station with a controlled temperature and to follow onsemi's application notes.

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