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NTMFS6H818NT1G - onsemi

Description: Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance; RoHS Compliant

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PCB Footprints
NTMFS6H818NT1G - onsemi PCB footprint - Other - Other - NVMFS6H864NT1G-2
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NTMFS6H818NT1G - onsemi  - 3D model - Other - NVMFS6H864NT1G-2
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NTMFS6H818NT1G Details

  • Manufacturer Part Number:

    NTMFS6H818NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    731 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    123 A

  • Drain-source On Resistance-Max:

    0.0057 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    136 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NTMFS6H818NT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended for optimal thermal performance. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended temperature range (TJ = -40°C to 150°C). Use a heat sink or thermal pad to dissipate heat, and avoid thermal hotspots. Also, ensure that the device is properly soldered and mounted to prevent thermal resistance.
  • Handle the device by the body or pins, avoiding direct contact with the die. Store the device in an anti-static bag or wrap it in anti-static material. Use an ESD wrist strap or mat when handling the device. Avoid touching the device's pins or die with bare hands.
  • The optimal gate resistor value depends on the specific application and switching frequency. A general guideline is to use a gate resistor value between 10 ohms and 100 ohms. Consult the application note or onsemi's support team for more specific guidance.
  • When paralleling multiple devices, ensure that each device has its own gate resistor and that the gate signals are properly synchronized. Also, ensure that the devices are properly thermally coupled and that the PCB layout is designed to minimize current imbalance.

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NTMFS6H818NT1G Overview

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