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NTMFS6H836NT1G - onsemi

Description: Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance; RoHS Compliant

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NTMFS6H836NT1G - onsemi PCB footprint - Other - Other - NVMFS6H864NT1G-2
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NTMFS6H836NT1G - onsemi  - 3D model - Other - NVMFS6H864NT1G-2
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NTMFS6H836NT1G Details

  • Manufacturer Part Number:

    NTMFS6H836NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2018-07-09

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    521 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    74 A

  • Drain-source On Resistance-Max:

    0.0114 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    8 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    89 W

  • Pulsed Drain Current-Max (IDM):

    432 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NTMFS6H836NT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The device should be placed near a thermal pad or a heat sink to ensure good heat dissipation.
  • The device requires a stable voltage supply and a proper biasing circuit to ensure optimal performance. A voltage regulator and a bias resistor network can be used to achieve this.
  • The critical timing parameters include the rise and fall times, propagation delay, and pulse width. These parameters should be carefully considered to ensure proper signal integrity and to prevent signal distortion.
  • ESD protection can be achieved using external ESD protection diodes or by using a TVS (Transient Voltage Suppressor) device. The device should be handled with care during assembly and testing to prevent ESD damage.
  • The device has a maximum junction temperature of 150°C. Thermal management considerations include providing a heat sink or thermal pad, using a thermal interface material, and ensuring good airflow around the device.

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NTMFS6H836NT1G Overview

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