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NTMFS6H848NLT1G - onsemi

Description: RoHS Compliant; Capable of 5V (Logic Level) Drive; Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance

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NTMFS6H848NLT1G - onsemi PCB footprint - Other - Other - DFN5 5x6 , 1.27P (SO−8FL) CASE 488AA ISSUE N_24
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NTMFS6H848NLT1G - onsemi  - 3D model - Other - DFN5 5x6 , 1.27P (SO−8FL) CASE 488AA ISSUE N_24
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NTMFS6H848NLT1G Details

  • Manufacturer Part Number:

    NTMFS6H848NLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5,8 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Date Of Intro:

    2019-12-10

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    267 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    59 A

  • Drain-source On Resistance-Max:

    0.011 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    11 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    73 W

  • Pulsed Drain Current-Max (IDM):

    319 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NTMFS6H848NLT1G Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the package, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the package and to connect it to a thermal plane or a heat sink.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including the maximum junction temperature (Tj) and storage temperature (Tstg). Additionally, consider using a heat sink, thermal interface material, and ensuring good airflow around the device.
  • To prevent electrostatic discharge (ESD) damage, it's recommended to follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits in the design, such as TVS diodes or ESD protection arrays.
  • Yes, the NTMFS6H848NLT1G is qualified for automotive and high-reliability applications. However, it's essential to review the device's AEC-Q101 qualification and ensure that it meets the specific requirements of your application, including temperature range, voltage, and other environmental factors.
  • To troubleshoot issues with the NTMFS6H848NLT1G, start by reviewing the datasheet and application notes, then check the device's operating conditions, including voltage, current, and temperature. Use oscilloscopes or logic analyzers to monitor the device's behavior, and consider using a fault injection or debugging tool to identify the root cause of the issue.

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