Part Image

NTMFS6H848NT1G - onsemi

Description: Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance; RoHS Compliant

Download NTMFS6H848NT1G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NTMFS6H848NT1G - onsemi PCB footprint - Other - Other - NVMFS6H864NT1G-2
click to zoom
3D Models
NTMFS6H848NT1G - onsemi  - 3D model - Other - NVMFS6H864NT1G-2
click to zoom

NTMFS6H848NT1G Details

  • Manufacturer Part Number:

    NTMFS6H848NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2018-07-09

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    278 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    57 A

  • Drain-source On Resistance-Max:

    0.0153 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    8 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    73 W

  • Pulsed Drain Current-Max (IDM):

    308 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NTMFS6H848NT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper thermal management, use a heat sink or thermal pad, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The SOA is typically defined by the device's voltage, current, and power ratings. For NTMFS6H848NT1G, the SOA is limited by the maximum voltage rating of 30V, maximum current rating of 10A, and maximum power rating of 30W.
  • Use proper ESD handling procedures, such as wearing an ESD strap, using an ESD mat, and storing the device in an ESD-safe container. Also, ensure that the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays.
  • Store the device in a dry, cool place, away from direct sunlight and moisture. Handle the device by the body, not the leads, and avoid bending or flexing the leads. Use anti-static packaging and follow proper ESD handling procedures.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NTMFS6H848NT1G Overview

Use the download button to access the NTMFS6H848NT1G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like NTMFS, or try a keyword search, such as Power Field-Effect Transistors

Parts related to NTMFS6H848NT1G

Showing 0 results