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NTMFS6H852NLT1G - onsemi

Description: Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance; RoHS Compliant; Capable of 5V (Logic Level) Drive

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NTMFS6H852NLT1G Details

  • Manufacturer Part Number:

    NTMFS6H852NLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Date Of Intro:

    2019-12-09

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    207 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    42 A

  • Drain-source On Resistance-Max:

    0.017 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    6 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    54 W

  • Pulsed Drain Current-Max (IDM):

    208 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NTMFS6H852NLT1G Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance would involve placing thermal vias under the package, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the package.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, use a suitable heat sink, and ensure good thermal interface material (TIM) between the device and heat sink. Additionally, consider using a thermal monitoring system to prevent overheating.
  • Exceeding the maximum junction temperature (Tj) rating can lead to reduced device lifespan, increased thermal resistance, and potentially even device failure. It's crucial to ensure that the device operates within the recommended temperature range to maintain reliability and performance.
  • To handle ESD protection for the NTMFS6H852NLT1G, follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits in the design. It's also recommended to use a device with built-in ESD protection, such as the NTMFS6H852NLT1G, which has an integrated ESD diode.
  • When paralleling multiple NTMFS6H852NLT1G devices for higher current capability, ensure that each device has its own separate heat sink, and that the devices are matched for optimal performance. Additionally, consider the impact of current imbalance and ensure that the devices are properly synchronized to prevent oscillations.

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NTMFS6H852NLT1G Overview

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