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NTMFS7D5N15MC - onsemi

Description: Shielded Gate MOSFET Technology ; Max rDS(on) = 3.2 mΩ at VGS = 10 V, ID = 67 A ; Max rDS(on) = 7.9 mΩ at VGS = 6 V, ID = 33 A ; Lowers Switching Noise/EMI ; MSL1 Robust Package Design ; 100% UIL Tested ; RoHS Compliant

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Symbol
NTMFS7D5N15MC - onsemi - PCB symbol
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PCB Footprints
NTMFS7D5N15MC - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AF ISSUE A
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3D Models
NTMFS7D5N15MC - onsemi - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AF ISSUE A
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NTMFS7D5N15MC Details

  • Manufacturer Part Number:

    NTMFS7D5N15MC

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Package Description:

    QFN-8

  • Manufacturer Package Code:

    483AF

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.2

  • Avalanche Energy Rating (Eas):

    486 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    95.6 A

  • Drain-source On Resistance-Max:

    0.0079 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    11 pF

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    166.7 W

  • Pulsed Drain Current-Max (IDM):

    478 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMFS7D5N15MC Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a 2-layer or 4-layer board with a solid ground plane on the bottom layer, and to place thermal vias under the device to dissipate heat efficiently.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, use a suitable thermal management system, and consider derating the device's power handling capabilities according to the temperature range.
  • To prevent ESD damage, it's recommended to use ESD protection devices such as TVS diodes or ESD arrays on the input and output pins, and to follow proper handling and storage procedures to minimize the risk of ESD events.
  • Yes, the NTMFS7D5N15MC is qualified for automotive and high-reliability applications, but it's essential to review the device's AEC-Q101 qualification and to consult with onsemi's application engineers to ensure the device meets the specific requirements of your application.
  • The recommended soldering and assembly techniques for this device include using a soldering iron with a temperature range of 250°C to 260°C, and following the JEDEC J-STD-020 standard for reflow soldering.

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NTMFS7D5N15MC Overview

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