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NTMFS7D8N10GTWG - onsemi

Description: Max rDS(on) = 7.6 mΩ at VGS = 10 V, ID = 48 A ; MSL1 Robust Package Design ; 100% UIL Tested ; RoHS Compliant ; Wide SOA performance; Shielded Gate MOSFET Technology

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NTMFS7D8N10GTWG - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AF ISSUE A
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NTMFS7D8N10GTWG - onsemi  - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AF ISSUE A
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NTMFS7D8N10GTWG Details

  • Manufacturer Part Number:

    NTMFS7D8N10GTWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Manufacturer Package Code:

    483AF

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    42 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    245 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    110 A

  • Drain-source On Resistance-Max:

    0.0076 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    99 pF

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    187 W

  • Pulsed Drain Current-Max (IDM):

    1656 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMFS7D8N10GTWG Frequently Asked Questions (FAQs)

  • The SOA is not explicitly stated in the datasheet, but it can be estimated using the MOSFET's voltage and current ratings. A general rule of thumb is to limit the voltage and current to 80% of the maximum ratings to ensure safe operation.
  • The RθJC can be calculated using the thermal resistance values provided in the datasheet. For the NTMFS7D8N10GTWG, the RθJC is approximately 1.25°C/W. This value can be used to estimate the junction temperature (Tj) based on the case temperature (Tc) and power dissipation (Pd).
  • The recommended gate drive voltage for the NTMFS7D8N10GTWG is between 4.5V and 10V. A higher gate drive voltage can improve switching performance, but may also increase power consumption and EMI.
  • To ensure the MOSFET is fully turned on and off, the gate drive voltage should be sufficient to overcome the threshold voltage (Vth). For the NTMFS7D8N10GTWG, the Vth is approximately 2.5V. A gate drive voltage of at least 4.5V is recommended to ensure the MOSFET is fully turned on.
  • The maximum allowed dv/dt for the NTMFS7D8N10GTWG is not explicitly stated in the datasheet. However, a general guideline is to limit the dv/dt to 1000 V/μs or less to prevent false triggering and ensure reliable operation.

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