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NTMFSC4D2N10MC - onsemi

Description: Dual Cool™ Top Side Cooling PQFN package; Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 44 A; Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A; High performance technology for extremely low rDS(on); 100% UIL Tested; RoHS Compliant

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NTMFSC4D2N10MC - onsemi PCB footprint - Other - Other - NTMFSC4D2N10MC-1
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NTMFSC4D2N10MC - onsemi  - 3D model - Other - NTMFSC4D2N10MC-1
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NTMFSC4D2N10MC Details

  • Manufacturer Part Number:

    NTMFSC4D2N10MC

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFN-8

  • Package Description:

    DFN-8

  • Manufacturer Package Code:

    506EG

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-07-17

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    116 A

  • Drain-source On Resistance-Max:

    0.0043 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    29 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    122 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMFSC4D2N10MC Frequently Asked Questions (FAQs)

  • The NTMFSC4D2N10MC can operate from -40°C to 150°C, but the recommended operating temperature range is -40°C to 125°C for optimal performance.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and a capacitor (e.g., 100 nF) in parallel. This helps to filter out noise and ensure stable operation.
  • To minimize thermal resistance, use a thermal pad with a minimum size of 2 mm x 2 mm, and ensure the device is centered on the pad. Use multiple vias to connect the thermal pad to a solid copper plane on the bottom layer of the PCB.
  • Yes, the NTMFSC4D2N10MC is qualified to the automotive AEC-Q101 standard, which is often used as a benchmark for high-reliability applications. However, it's essential to consult with onsemi's application engineers to ensure the device meets the specific requirements of your application.
  • To handle the high current capability, use wide traces (e.g., 1 oz copper) and ensure the PCB has a sufficient number of layers to distribute the current. Additionally, consider using a heat sink or thermal interface material to improve heat dissipation.

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NTMFSC4D2N10MC Overview

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