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NTMFSCH0D4N04XMTWG - onsemi

Description: Power, Single, N-Channel, DFN8 5x6,, DUAL COOL, GEN2, 40 V, 0.40 mΩ, 529 A

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NTMFSCH0D4N04XMTWG - onsemi PCB footprint - Other - Other - DFN8 4.90x5.80x0.90, 1.27P CASE 506FF ISSUE D
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NTMFSCH0D4N04XMTWG - onsemi  - 3D model - Other - DFN8 4.90x5.80x0.90, 1.27P CASE 506FF ISSUE D
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NTMFSCH0D4N04XMTWG Details

  • Manufacturer Part Number:

    NTMFSCH0D4N04XMTWG

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DFN-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    807 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    540 A

  • Drain-source On Resistance-Max:

    0.00062 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    131 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    208 W

  • Pulsed Drain Current-Max (IDM):

    1664 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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NTMFSCH0D4N04XMTWG Overview

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