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NTMFWS1D5N08XT1G - onsemi

Description: Low QRR, Soft Recovery Body Diode; Low QG and Capacitance to Minimize Driver Losses; These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS Compliant; Low RDS(on) to Minimize Conduction Losses

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NTMFWS1D5N08XT1G - onsemi PCB footprint - Other - Other - DFNW5 5x6 (FULL−CUT SO8FL WF) CASE 507BA ISSUE A_1
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NTMFWS1D5N08XT1G - onsemi  - 3D model - Other - DFNW5 5x6 (FULL−CUT SO8FL WF) CASE 507BA ISSUE A_1
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NTMFWS1D5N08XT1G Details

  • Manufacturer Part Number:

    NTMFWS1D5N08XT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFNW5 4.90x5.90x1.00, 1.27P

  • Package Description:

    SO-8FL WF, DFNW5, 4 PIN

  • Manufacturer Package Code:

    507BA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    25 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    225 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    253 A

  • Drain-source On Resistance-Max:

    0.00143 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    25 pF

  • JESD-30 Code:

    R-PSSO-F4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    194 W

  • Pulsed Drain Current-Max (IDM):

    1071 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMFWS1D5N08XT1G Frequently Asked Questions (FAQs)

  • A 2-layer PCB with a solid ground plane on the bottom layer and a thermal relief pattern on the top layer is recommended. The device should be placed near a thermal pad or a heat sink to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C. Implement thermal management techniques such as heat sinks, thermal interfaces, and airflow to maintain a safe operating temperature.
  • The NTMFWS1D5N08XT1G has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is handled in a static-safe environment.
  • Yes, the NTMFWS1D5N08XT1G is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is PPAP capable. However, additional testing and validation may be required for specific applications.
  • Use a systematic approach to troubleshoot issues, starting with a review of the device's operating conditions, PCB layout, and component selection. Utilize onsemi's application notes and technical support resources, and consider performing failure analysis or consulting with an onsemi field application engineer.

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NTMFWS1D5N08XT1G Overview

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