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NTMJS1D4N06CLTWG - onsemi

Description: LFPAK-E Package; Ultra Low RDS-on

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NTMJS1D4N06CLTWG - onsemi PCB footprint - Other - Other - LFPAK8 5x6
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NTMJS1D4N06CLTWG - onsemi  - 3D model - Other - LFPAK8 5x6
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NTMJS1D4N06CLTWG Details

  • Manufacturer Part Number:

    NTMJS1D4N06CLTWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    LFPAK-8

  • Package Description:

    LFPAK-8

  • Manufacturer Package Code:

    760AA

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    1376 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    262 A

  • Drain-source On Resistance-Max:

    0.0018 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    57 pF

  • JESD-30 Code:

    R-PDSO-X5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    180 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NTMJS1D4N06CLTWG Frequently Asked Questions (FAQs)

  • The maximum operating frequency of NTMJS1D4N06CLTWG is 100 kHz, but it can be operated at higher frequencies with proper thermal management and derating.
  • To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and derating the device according to the temperature derating curve provided in the datasheet.
  • The recommended gate drive voltage for NTMJS1D4N06CLTWG is between 10V to 15V, with a maximum gate-source voltage of 20V. However, it's essential to consult the datasheet for specific gate drive requirements and ensure the gate driver is compatible with the device.
  • To protect NTMJS1D4N06CLTWG from ESD, it's essential to follow proper handling and storage procedures, including using anti-static wrist straps, mats, and packaging materials. Additionally, ensure that the device is properly grounded during assembly and testing.
  • The maximum allowed voltage imbalance between the drain and source pins of NTMJS1D4N06CLTWG is ±10V. Exceeding this limit can cause damage to the device.

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NTMJS1D4N06CLTWG Overview

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