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NTMJS2D5N06CLTWG - onsemi

Description: Power MOSFET 60 V, 2.5 mΩ, 150 A, Single N-Channel

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NTMJS2D5N06CLTWG - onsemi PCB footprint - Other - Other - LFPAK8 4.90x4.80x1.12MM, 1.27P CASE 760AA ISSUE D
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NTMJS2D5N06CLTWG - onsemi  - 3D model - Other - LFPAK8 4.90x4.80x1.12MM, 1.27P CASE 760AA ISSUE D
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NTMJS2D5N06CLTWG Details

  • Manufacturer Part Number:

    NTMJS2D5N06CLTWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    LFPAK-8

  • Manufacturer Package Code:

    760AA

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    565 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    164 A

  • Drain-source On Resistance-Max:

    0.0033 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    113 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NTMJS2D5N06CLTWG Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance would involve placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the device and connect it to a thermal plane or a heat sink.
  • To ensure proper biasing, follow the recommended operating conditions in the datasheet. Make sure to provide a stable voltage supply, and use a suitable gate driver to ensure the gate-source voltage (Vgs) is within the recommended range. Also, ensure the device is properly heatsinked to prevent thermal runaway.
  • Monitor the device's junction temperature (Tj), drain-source voltage (Vds), and drain current (Id) to prevent device failure. Exceeding the maximum ratings for these parameters can lead to device degradation or failure. Also, monitor the gate-source voltage (Vgs) to prevent over-voltage stress.
  • When selecting a gate driver, consider the device's gate charge, peak current, and voltage rating. Choose a gate driver that can provide the required peak current and voltage to ensure proper switching. Also, consider the driver's propagation delay, rise and fall times, and input voltage range to ensure compatibility with the device.
  • The NTMJS2D5N06CLTWG has an ESD rating of 2 kV (Human Body Model) and 250 V (Machine Model). To prevent ESD damage, handle the device with an ESD wrist strap or mat, and use ESD-safe packaging and storage materials. Avoid touching the device's pins or exposing it to static electricity.

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NTMJS2D5N06CLTWG Overview

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